subthreshold region

См. также в других словарях:

• Subthreshold leakage — or subthreshold conduction or subthreshold drain current is the current that flows between the source and drain of a MOSFET when the transistor is in the subthreshold region, that is, for gate to source voltages below the threshold voltage. The… …   Wikipedia

• Subthreshold Leakage — Bei subthreshold leakage (englisch, dt. ‚Unterschwellspannungsleckstrom‘) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… …   Deutsch Wikipedia

• Subthreshold leakage — Bei subthreshold leakage (dt. »Unterschwellspannungsleckstrom«) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… …   Deutsch Wikipedia

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• Unterschwellspannungsstrom — Bei subthreshold leakage (dt. »Unterschwellspannungsleckstrom«) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… …   Deutsch Wikipedia

• Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… …   Wikipedia

• Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… …   Wikipedia

• EKV MOSFET Model — The EKV Mosfet Model is a mathematical model of metal oxide semiconductor field effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design. [Citation last1=Enz first1=C. C. last2=Krummenacher first2=F.… …   Wikipedia

• Metall-Oxid-Halbleiter-Feldeffekttransistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) gehört zu den Feldeffekttransistoren mit isoliertem Gate, auch als IGFET bezeichnet. Er ist den… …   Deutsch Wikipedia

• Nonsynaptic plasticity — Brain connectivity network Nonsynaptic plasticity is a form of neuroplasticity that involves modification of ion channel function in the axon, dendrites, and cell body that results in specific changes in the integration of EPSPs and IPSPs, thus… …   Wikipedia

• Extreme ultraviolet lithography — (also known as EUV or EUVL ) is a next generation lithography technology using the 13.5 nm EUV wavelength. EUVL opticsEUVL is a significant departure from the deep ultraviolet lithography used today. All matter absorbs EUV radiation. Hence, EUV… …   Wikipedia